AAT7103 25v n-channel power mosfet preliminary information 7103.2003.04.0.61 1 general description the AAT7103 25v n-channel power mosfet is a member of analogictech?'s trenchdmos? product family. using the ultra-high density propri- etary trenchdmos technology, the product demonstrates high power handling and small size. applications ? battery packs ? cellular & cordless telephones ? pdas, camcorders, and cell phones features ?v ds(max) = 25v ?i d(max) (1) = 6.8 a @ 25c ? low r ds(on) : ? 26 m ? @v gs = 4.5v ? 41 m ? @v gs = 2.5v dual sop-8 package d1 d1 d2 d2 s1 g1 s2 g2 top view 1234 8765 absolute maximum ratings (t a =25c unless otherwise noted) thermal characteristics symbol description value units r ja typical junction-to-ambient steady state, one fet on 2 100 c/w r ja2 maximum junction-to-ambient figure, t < 10 sec. 1 62.5 c/w r jf typical junction-to-foot, one fet on 1 35 c/w symbol description value units v ds drain-source voltage 25 v v gs gate-source voltage 12 i d continuous drain current @ t j =150c 1 t a = 25c 6.8 t a = 70c 5.4 i dm pulsed drain current 3 24 a i s continuous source current (source-drain diode) 1 1.8 p d maximum power dissipation 1 t a = 25c 2.0 w t a = 70c 1.25 t j , t stg operating junction and storage temperature range -55 to 150 c
electrical characteristics (t j =25c unless otherwise noted) note 1: based on thermal dissipation from junction to ambient while mounted on a 1? x 1? pcb with optimized layout. a 10 secon d pulse on a 1? x 1? pcb approximates testing a device mounted on a large multi-layer pcb as in many applications. r jf + r fa = r ja where the foot thermal reference is defined as the normal solder mounting surface of the device?s leads. r jf is guaranteed by design; however, r fa is determined by pcb design. actual maximum continuous current is limited by the application?s design. note 2: steady state thermal response while mounted on a 1? x 1? pcb with maximum copper area is provided for comparison with other devices. this test condition approximates many battery pack applications. note 3: pulsed measurement 300 s, single pulse. note 4: guaranteed by design. not subject to production testing. symbol description conditions min typ max units dc characteristics bv dss drain-source breakdown voltage v gs =0v, i d =250a 25 v r ds(on) drain-source on-resistance 3 v gs =4.5v, i d =6.8a 19 26 m ? v gs =2.5v, i d =5.4a 28 41 i d(on) on-state drain current 3 v gs =4.5v ,v ds =5v (pulsed) 24 a v gs(th) gate threshold voltage v gs =v ds , i d =250a 0.6 v i gss gate-body leakage current v gs = 12v, v ds =0v 100 na i dss drain source leakage current v gs =0v, v ds =25v 1 a v gs =0v, v ds =20v, t j =70c 5 g fs forward transconductance 3 v ds =5v, i d =6.8a 20 s dynamic characteristics 4 q g total gate charge v ds =15v, r d =2.2 ? , v gs =4.5v 13 19 q gs gate-source charge v ds =15v, r d =2.2 ? , v gs =4.5v 1.9 nc q gd gate-drain charge v ds =15v, r d =2.2 ? , v gs =4.5v 2.9 t d(on) turn-on delay v dd =15v, v gs =10v, r d =2.2 ? , rg=6 ? 15 t r turn-on rise time v dd =15v, v gs =10v, r d =2.2 ? , rg=6 ? 18 ns t d(off) turn-off delay v dd =15v, v gs =10v, r d =2.2 ? , rg=6 ? 36 t f turn-off fall time v dd =15v, v gs =10v, r d =2.2 ? , rg=6 ? 27 source-drain diode characteristics v sd source-drain forward voltage 3 v gs =0, i s =6.8a 1.5 v i s continuous diode current 1 1.8 a AAT7103 25v n-channel power mosfet 2 7103.2003.04.0.61
typical characteristics (t j = 25oc unless otherwise noted) source-drain diode forward voltage 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 v sd (v) i s (a) t j = 25 c t j = 150 c gate charge 0 1 2 3 4 5 0 2 4 6 8 10 12 14 16 q g , charge (nc) v gs (v) v d =15v i d =5.5a on-resistance vs. gate to source voltage 0 10 20 30 40 50 60 0 123 45 v gs ( v ) r ds(on) (m ? ) i d = 5.5a on-resistance vs. drain current 0 10 20 30 40 50 60 0 8 16 24 32 i d (a) r ds(on) (m ? ) v gs = 2.5 v v gs = 4.5 v transfer characteristics 0 8 16 24 32 0 123 4 v gs (v) i d (a) v d =v g 25c -55c 125c output characteristics 0 8 16 24 32 0 0.5 1 1.5 2 2.5 3 v ds (v) i ds (a) 1.5v 2v 3.5v 2.5v 5v 4.5v 4v 3v AAT7103 25v n-channel power mosfet 7103.2003.04.0.61 3
AAT7103 25v n-channel power mosfet 4 7103.2003.04.0.61 advanced analogic technologies, inc. 830 e. arques avenue, sunnyvale, ca 94085 phone (408) 737-4600 fax (408) 737-4611 analogictech cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in an analogictech pr oduct. no circuit patent licenses, copyrights, mask work rights, or other intellectual property rights are implied. analogictech reserves the right to make changes to their products or specifications or to discontinue any product or service wi thout notice, and advise customers to obtain the latest version of relevant information to verify, before placing orders, that information being relied on is current and complete. all products are sold subject to the terms and conditions of sale supplied at the time of order acknowledgement, including those pertaining to warranty, patent infringement, and limitation of l iability. analogictech warrants performance of its semiconductor products to the specifications applicable at the time of sale in accorda nce with analogictech?s standard warranty. testing and other quality control techniques are utilized to the extent analogictech deems necessary to support this warranty. specific tes ting of all parameters of each device is not necessarily performed. ordering information note: sample stock is generally held on all part numbers listed in bold . package information all dimensions in millimeters. 0.175 0.075 6.00 0.20 3.90 0.10 1.55 0.20 1.27 bsc 0.42 0.09 8 4.90 0.10 4 4 45 0.375 0.125 0.235 0.045 0.825 0.445 package marking part number (tape and reel) sop-8 7103 AAT7103ias-t1
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